Published March 7, 2023
| Version v1
Journal article
Open
ELECTROPHYSICAL PROPERTIES OF NANOFILMS
- 1. Karshi State University. Karshi 180100. Uzbekistan
Description
Manganese silica thin films of different thicknesses were obtained in a magnetron device under high vacuum conditions. The surface resistance, surface concentration and Hall coefficients of nanosized manganese silicide films obtained by the ion-plasma method were measured on an HMS 5000 device. The Hall coefficient for a 102.3 nm thick film of manganese silicide grown on a silicon surface by the ion-plasma method is 2,8979·10-5 sm3/C.
Files
192-195.pdf
Files
(283.2 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:7a53dfa2e19a58f6b5cc140e1bf15878
|
283.2 kB | Preview Download |
Additional details
Related works
- Is cited by
- Journal article: 10.5281/zenodo.7704893 (DOI)
References
- 1. A. Pique, D.B. Chrisey, R.C. Augeung, V. et al. A. novel laser transfer process for direct writing of electronic and sensor materials//Applied Physics A/ - 1999 – V. 69. №6 2. M.T. Normuradov, A.S. Risbaev, D.A. Normurodov, K.T. Dovranov, H.T. Davranov. Composition and electronic structure of nanosized BaSi2 phases created in the subsurface region of Si. Лазерные, Плазменные Исследования и Технологии. М., 22–25 марта 2022 г. 3. Электронная структура и физические свойства наноразмерных гетеростуктур. Монография под редакцией Нормуродова М.Т., Умирзакова Б.Е. Карши-2021 г.265 с. 4. H.Gnaser, B.Huber, Ch.Ziegler//Encyclopedia of Nanoscience and Nanotechnology. Vol. 6.505 (2004) 5. M.T. Normuradov, D.A. Normurodov, K.T. Davronov. Creation of new materials based on dielectric films using low-energy ion implantation. Euroasian Journal of Semiconductors Science and Engineering, 1(6), 8. (2019).