EFFECT OF ION IMPLANTATION ON THE COMPOSITION, STRUCTURE AND OPTICAL PROPERTIES OF SILICON
Keywords:
heterostructure, nanophase, band gap, nanolayer, nanocrystalline phases, ion implantation, morphology, silicide, transition layer.Abstract
In this work, comparative studies of the effect of bombardment with Ar+ and Ni+ ions on the composition, structure, and light transmission coefficient of single-crystal Si are carried out. In both cases, implantation leads to disordering of the surface layers and a decrease in K. After heating at T = 900 K of Si implanted with Ni+ ions, epitaxial phases are formed in the surface region of Si, depending on the dose of ions (at D < 51015 см-2) and films (at D = 61016 см-2) NiSi2.
References
S. Schuppler, S.L. Friedman, M.A. Marcus, D.L. Adler, Y.-H. Xie, F.M. Ross, T.D. Harris, W.L. Brown, Y.J. Chabal, L.E. Brus, P.H. Citrin. Phys. Rev. Lett., 72, 2648 (1994).
Umirzakov, B.E., Tashmukhamedova, D.A., Tashatov, A.K., Mustafoeva, N.M. Technical Physics, 2019, 64(5), 708–710
Umirzakov B.E., Tashmukhamedova D.A., Tashatov A.K., Mustafoeva N.M., Muradkabilov D.M. // Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111) // Semiconductors, 2020, 54(11), стр. 1424–1429
Н. М. Мустафоева, Н. М. Мустафаева // Исследование Физические Свойства Нанопленок Nisi2/Si // Таълим ва ривожланиш таҳлили онлайн илмий журнали, 2022 йил октябр, Vol. 2 No. 10 (2022)
А. К. Ташатов , Н. М. Мустафоева //Нанопленок CoSi2 На Поверхности Si При Твердофазном Осаждени // Miasto Przyszłości
Kielce, Vol. 25 (2022):
Donaev S.B. Umirzakov B.E. Mustafoeva N.M. // Emissivity of Laser-Activated Pd-Ba Alloy // Technical Phusics, 2019, Vol.64, Issue 10 (2019), pp. 1541-1543
Tashatov A.K. Mustafoeva N.M. // Surface Morphology of NiSi2/Si Films Obtained by the Method of Solid-Phase Deposition // Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2020, Vol.14, No 1, pp. 81-84.
Ташатов А.К. Мустафоева Н.М. // Морфология, состав и структура поверхности пленок NiSi2/Si полученных методом твердофазной эпитаксии // Узбекиский физический журнал, 23(2), 2021. C.55-60
