METHOD FOR DETERMINING THE CONDUCTIVITY  DISTRIBUTION OF DOPED SAMPLES

A.M Samatov; R.M Jalalov; K.M Fayzullaev

METHOD FOR DETERMINING THE CONDUCTIVITY DISTRIBUTION OF DOPED SAMPLES

Authors

A.M Samatov This work describes a four-probe method for measuring the resistivity of semiconductor materials doped with different dopant atoms. The article presents the requirements for the size and shape of the samples that are the object of research.
R.M Jalalov Namangan State University
K.M Fayzullaev Namangan State University

Keywords:

semiconductor, conductivity, four-probe method, silicon, transition elements.

Abstract

This work describes a four-probe method for measuring the resistivity of semiconductor materials doped with different dopant atoms. The article presents the requirements for the size and shape of the samples that are the object of research.

References

Zi S. Physics of semiconductor devices. – M.: Mir, 1984- 456 p.

Fistul V.I. Introduction to the physics of semiconductors. -M: Higher School, 1984.- 352 p.

Pavlov L.P. Methods for determining the parameters of semiconductor materials. – M.: Higher School, 1985.-420c.

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Published

2023-11-28

How to Cite

Samatov, A., Jalalov, R., & Fayzullaev, K. (2023). METHOD FOR DETERMINING THE CONDUCTIVITY DISTRIBUTION OF DOPED SAMPLES. Educational Research in Universal Sciences, 2(15 SPECIAL), 133–136. Retrieved from http://erus.uz/index.php/er/article/view/4687