Bi ЭРИТМАСИДА ЎСТИРИЛГАН ҚАТТИҚ ЭРИТМА ЭПИТАКСИАЛ ҚАТЛАМИНИНГ СИРТИНИ ЎРГАНИШ

Authors

  • А.С. Саидов ЎзФА физика-техника институти ф.м.ф.д проф.
  • Д.О. Эшонхўжаев Андижон машинасозлик институти таянч докторанти

Keywords:

қаттиқ эритма, эпитаксиал қатлам, нанокристаллар.

Abstract

Ушбу мақолада n-GaAs-n+(GaAs)1-x-y(Ge2)x(ZnSe)y тузилмалари ва Bi эритмасида ўстирилган (GaAs)1-у-х(Ge2)y(ZnSe)х қаттиқ эритманинг эпитаксиал қатлами юзаларининг спектрал  фотосезувчанлиги бўйича сканерлаш зонд микроскопида олинган экспериментал тадқиқотлар натижалари келтирилган.

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Published

2023-12-13

How to Cite

Саидов, А., & Эшонхўжаев, Д. (2023). Bi ЭРИТМАСИДА ЎСТИРИЛГАН ҚАТТИҚ ЭРИТМА ЭПИТАКСИАЛ ҚАТЛАМИНИНГ СИРТИНИ ЎРГАНИШ. Educational Research in Universal Sciences, 2(16 SPECIAL), 379–385. Retrieved from http://erus.uz/index.php/er/article/view/4992