ELECTROPHYSICAL PROPERTIES OF NANOFILMS
Keywords:
evaluated types of work, ICI, corresponding modules, modular rating system, current knowledge and skills of students, construction of test programs, similar disciplines, input and output control.Abstract
Manganese silica thin films of different thicknesses were obtained in a magnetron device under high vacuum conditions. The surface resistance, surface concentration and Hall coefficients of nanosized manganese silicide films obtained by the ion-plasma method were measured on an HMS 5000 device. The Hall coefficient for a 102.3 nm thick film of manganese silicide grown on a silicon surface by the ion-plasma method is 2,8979·10-5 sm3/C.
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